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PD - 97486A
AUTOMOTIVE GRADE
Features
l l l l l
AUIRF1405ZS AUIRF1405ZL
HEXFET(R) Power MOSFET
V(BR)DSS RDS(on) max. ID
D
l l
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
55V 4.9m 150A
G S
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
G
D
S G
D
S
D2Pak TO-262 AUIRF1405ZS AUIRF1405ZL
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
Max.
150 110 600 230 1.5 20 270 420 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A W W/C V mJ A mJ C
h
d
g
300 10 lbfyin (1.1Nym)
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mount, steady state)i
Typ.
--- ---
Max.
0.65 40
Units
C/W
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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07/01/2010
AUIRF1405ZS/L
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 --- --- 2.0 88 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.049 3.7 --- --- --- --- --- --- 120 31 46 18 110 48 82 4.5 7.5 4780 770 410 2730 600 910 --- --- 4.9 4.0 --- 20 250 200 -200 180 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A S VDS = 25V, ID = 75A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 20V
e
VGS = -20V ID = 75A VDS = 44V VGS = 10V VDD = 25V ID = 75A RG = 4.4 VGS = 10V Between lead,
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
nC
e e
ns
D
nH
6mm (0.25in.) from package
G
pF
S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
f
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 30 30 75 A 600 1.3 46 45 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 25V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.10mH RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. This is applied to D 2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
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AUIRF1405ZS/L
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 D Pak
2
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
N/A MSL1 Class M4 (425V) AEC-Q101-002 Class H1C (2000V) AEC-Q101-001 Class C5 (1125V) AEC-Q101-005 Yes
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRF1405ZS/L
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
4.5V
10
4.5V
10
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
ID, Drain-to-Source Current ()
T J = 150C
100
Gfs, Forward Transconductance (S)
175 150 125 100 75 50 25 0 T J = 175C T J = 25C
10
T J = 25C
VDS = 25V 20s PULSE WIDTH
1 4 6 8 10 12
0
25
50
75
100 125 150 175 200
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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AUIRF1405ZS/L
100000
C oss = C ds + C gd
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
12.0 ID= 75A 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 44V VDS= 28V
C, Capacitance(pF)
C iss
1000
Coss Crss
100 1 10 100
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00
T J = 175C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100 100sec 10 Tc = 25C Tj = 175C Single Pulse 1 1 10 1msec 10msec 100 1000
1.00
T J = 25C
0.10 0.0 0.5 1.0 1.5
VGS = 0V 2.0 2.5
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
ce
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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AUIRF1405ZS/L
150 125
ID, Drain Current (A)
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A VGS = 10V
2.0
100 75 50 25 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Normalized On-Resistance vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF1405ZS/L
EAS , Single Pulse Avalanche Energy (mJ)
15V
500
VDS
L
DRIVER
400
ID 31A 53A BOTTOM 75A TOP
RG
20V VGS
D.U.T
IAS tp
+ V - DD
300
A
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
0 25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy vs. Drain Current
10 V
QGS VG QGD
4.0
VGS(th) Gate threshold Voltage (V)
3.5
Charge
3.0
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
2.5
ID = 250A
2.0
1.5
50K 12V .2F .3F
1.0
D.U.T. + V - DS
-75 -50 -25
0
25
50
75 100 125 150 175 200
VGS
3mA
T J , Temperature ( C )
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit
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AUIRF1405ZS/L
10000
Duty Cycle = Single Pulse
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 0.05
100
10
0.10
1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
300
EAR , Avalanche Energy (mJ)
250
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A
200
150
100
50
0 25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
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AUIRF1405ZS/L
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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AUIRF1405ZS/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1405ZS
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1405ZS/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1405ZL
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1405ZS/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
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AUIRF1405ZS/L
Ordering Information
Base part AUIRF1405ZL AUIRF1405ZS Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRF1405ZL AUIRF1405ZS AUIRF1405ZSTRL AUIRF1405ZSTRR
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AUIRF1405ZS/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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